HALL EFFECT MEASUREMENT SYSTEM
SOFTWARE
FYTRONIX Hall effect systems measure electrical properties of semiconductor materials
Our device is a compact system and can be used on the desktop.
Technical Specifications of the System:
Resistance range: 104-107 Ohm.cm
Carrier density: l07 and l021 1cm-
Mobility: 1- l07 (cm2/Volt.s)
Carrier concentration: 107-1021 cm-3
Current source range: 1nA to 20mA (DC) or more
Output voltage of the device: 12V:
Minimum Hall voltage range: 1pV
Resistance-current (I-R) measurements
Current-voltage (I-V) measurements are made, graphs are drawn, and the obtained data is recorded on the computer.
Measured parameters
sheet resistance
Resistance
sheet concentration,
Conductivity,
Hall coefficient
Magneto Resistance
Measurement method: Van der Pauw method
Magnetic field strength: 0.51T+0.03T
Magnetic flux density: 0.51T
Time-dependent Fast heating feature: 40 minutes from room temperature to 300 oC
Magnets: Permanent magnet feature
The system measure the following measurements depending on temperature:
Carrier concentration-temperature
Carrier mobility-temperature
Resistance-temperature
Conductivity-temperature
Hall coefficient-temperature
The device measures all parameters with computer software.
Sample measurements up to 20x2Omm can be made with the sample holder.
Standard sample holder
test sample
A composition of 95% Indium and 5% tin was used to bond the samples to the holders.
with InSn or conductive silver paint
Temperature controller
Temperature range: Room temperature - 300 oC
Heating Rate feature
Cooling system:
Preventing the flow of cooled air generated by the moving magnet
Purge gas flow feature to maintain equal temperature inside the chamber
Ability to adjust measurable temperature using the button on the front panel
Warranty period: 2 YEARS
THE VAN DER PAUW METHOD
The van der Pauw Method is a technique commonly used to measure the sheet resistance and the Hall Coefficient of a sample. Its power lies in its ability to accurately measure the properties of a sample of any arbitrary shape, so long as the sample is approximately two- dimensional (i.e. it is much thinner than it is wide) and the placement of the electrodes is known.
From the measurements made, the following properties of the material can be calculated:
♦ The sheet resistance, from which the resistivity can be inferred for a sample of a given thickness.
♦ The doping type (i.e. if it is a P-type or N-type) material.
♦ The sheet carrier density of the majority carrier (the number of majority carriers per unit area). From this, the density of the semiconductor, often known as the doping level, can be found for a sample with a given thickness.
♦ The mobility of the majority carrier.
SOFTWARE
Data sheet:
Method: Four probe method
Conductivity type: DC electrical conductivity
Sample: Powder, thin film or pellet
HALL EFFECT MEASUREMENT SYSTEM
- Product Code: HALL-EFFECT-MEASUREMENT-SYSTEM
- Availability: In Stock
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0.00TL