HALL EFFECT MEASUREMENT SYSTEM

SOFTWARE

FYTRONIX Hall effect systems measure electrical properties of semiconductor materials

Our device is a compact system and can be used on the desktop.

Technical Specifications of the System:

Resistance range: 104-107 Ohm.cm

Carrier density: l07 and l021 1cm-

Mobility: 1- l07 (cm2/Volt.s)

Carrier concentration: 107-1021 cm-3

Current source range: 1nA to 20mA (DC) or more

Output voltage of the device: 12V:

Minimum Hall voltage range: 1pV

Resistance-current (I-R) measurements

Current-voltage (I-V) measurements are made, graphs are drawn, and the obtained data is recorded on the computer.

Measured parameters

sheet resistance

Resistance

sheet concentration,

Conductivity,

Hall coefficient

Magneto Resistance

Measurement method: Van der Pauw method

Magnetic field strength: 0.51T+0.03T

Magnetic flux density: 0.51T

Time-dependent Fast heating feature: 40 minutes from room temperature to 300 oC

Magnets: Permanent magnet feature

The system measure the following measurements depending on temperature:

Carrier concentration-temperature

Carrier mobility-temperature

Resistance-temperature

 Conductivity-temperature

Hall coefficient-temperature

The device measures all parameters with computer software.

Sample measurements up to 20x2Omm can be made with the sample holder.

Standard sample holder

test sample

A composition of 95% Indium and 5% tin was used to bond the samples to the holders.

with InSn or conductive silver paint

Temperature controller

Temperature range: Room temperature - 300 oC

Heating Rate feature

Cooling system:

Preventing the flow of cooled air generated by the moving magnet

Purge gas flow feature to maintain equal temperature inside the chamber

Ability to adjust measurable temperature using the button on the front panel

Warranty period: 2 YEARS

THE VAN DER PAUW METHOD

The van der Pauw Method is a technique commonly used to measure the sheet resistance and the Hall Coefficient of a sample. Its power lies in its ability to accurately measure the properties of a sample of any arbitrary shape, so long as the sample is approximately two- dimensional (i.e. it is much thinner than it is wide) and the placement of the electrodes is known.

From the measurements made, the following properties of the material can be calculated:

♦ The sheet resistance, from which the resistivity can be inferred for a sample of a given thickness.

♦ The doping type (i.e. if it is a P-type or N-type) material.

♦ The sheet carrier density of the majority carrier (the number of majority carriers per unit area). From this, the density of the semiconductor, often known as the doping level, can be found for a sample with a given thickness.

♦ The mobility of the majority carrier.

SOFTWARE

Data sheet: 

Method: Four probe method 

Conductivity type: DC electrical conductivity 

Sample: Powder, thin film or pellet