PHOTODEVICE CHARACTERIZATION SYSTEM
System automatically measures current and voltage modulated characteristics of photodiodes, photosensors and photodetectors under various various wavelengths
PHOTODEVICE Characterization System
This system analyzes photo characteristics of diode, photodiode, photosensor and photodetector as a function of voltage and time under various wavelengths.
This system is a complete system
1. Current-voltage (I-V) characteristics of the device
Measure I-V characteristics under SUN light and various wavelength
Measure I-V characteristics under SUN light with UV , VIS-NIR regions
System performs
a. I-V characteristics
b. Photocurrent-voltage characteristics
c. Photopower-voltage characteristics
d. lnI –Votlage characteristics
e. Photocurrent- Voltage characteristics
2. Photocurrent (Iph)-wavelength measurements.
Photocurrent (Iph)-wavelength characteristics under various wavelengths
System measure
a. Photocurrent- wavelength characteristics
b. Photoresponse- wavelength characteristics
c. Photogain- wavelength characteristics
d. Photoresponsivity- wavelength characteristics
e. Photodedectivity- wavelength characteristics
3. Photocurrent (Iph)-time measurements.
Photocurrent (Iph)-time characteristics under SUN light and various wavelengths
Photocurrent (Iph)-time characteristics under SUN light with UV , VIS-NIR regions
System measure
f. Photocurrent-time characteristics
g. Photoresponse-time characteristics
h. Photogain-time characteristics
i. Photoresponsivity-time characteristics
j. Photodedectivity-time characteristics
k. Time rise and time decay characteristics
4. Impedance spectoroscopy-voltage measurements.
a. Impedance-Voltage characteristics under SUN
b. Admittance-Voltage characteristics under SUN
c. Phase-V characteristics under SUN
d. Series Capacitance-Voltage characteristics under SUN
e. Paralel Capacitance-Voltage characteristics under SUN
f. Series Resistance-Voltage characteristics under SUN
g. Paralel Resistance-Votlage characteristics under SUN
h. Conductance-Voltage characteristics under SUN
i. Reactance-Voltage characteristics under SUN
j. Susceptance-Voltage characteristics under SUN
5. Impedance spectroscopy-time measurements.
k. Impedance-time characteristics under SUN
l. Admittance-time characteristics under SUN
m. Phase-time characteristics under SUN
n. Series Capacitance-time characteristics under SUN
o. Paralel Capacitance-time characteristics under SUN
p. Series Resistance-time characteristics under SUN
q. Paralel Resistance-time characteristics under SUN
r. Conductance-time characteristics under SUN
s. Reactance-time characteristics under SUN
t. Susceptance-time characteristics under SUN
6. İnterface state density-time measurements
System automatically measure C-V, G-V and Css-V, Gss, Cm, Gm measurements with frequency step
a. Determination of Nss by Conductance method
7. Photointerface state density-time measurements
System automatically measure photoC-V, photoG-V and photoCss-V, photoGss, PhotoCm, PhotoGm measurements with frequency step
b. Determination of photoNss by Conductance method under 1 SUN
The system includes
a. Sourcemeter
Voltage range: -10 V to +10 V
Current range: 100 nA to 500 Ma
b. Impedance analyzer
Frequency range: 125 Hz to 25 MHZ
Voltage range: -5 V to +5 Voltage
c. Time resolved system
Wavelength range: 370, 380, 390 400 410 430 450 460 520 570 610 620 690 750 760 820 860 960 980 1050 nm
Optic chopper: ms puls to second pulse
PHOTODEVICE CHARACTERIZATION SYSTEM
- Product Code: PHOTODEVICE-CHARACTERIZATION-SYSTEM
- Availability: In Stock
-
0.00TL
