FYTRONIX ELEKTRONIK TEKNOLOJİLERİ A.S

IMPEDANCE ANALYZER C-V ANALYZR

  • Product Code: Impedance-Analyzer-8500
  • Availability: In Stock

   IMPEDANCE ANALYZER C-V ANALYZR


  • IMPEDANCE ANALYZER C-V ANALYZR

FYTRONIX IMP 8500 | Advanced Impedance Spectroscopy & C-V Characterization System

The FYTRONIX IMP 8500 is a state-of-the-art laboratory solution engineered for high-precision electrical characterization of semiconductors, photovoltaics, and advanced materials. By combining a wide-bandwidth impedance analyzer with automated research software, the system provides deep insights into AC conductivity, charge transport, and dielectric properties.


System Configuration

The complete measurement workstation includes:

·         High-Speed Impedance Analyzer: Core unit with ultra-wide frequency response.

·         Precision Sample Holder: Designed for stable electrical contact and noise reduction.

·         FYTRONIX IMP-Analyzer Software: Advanced interface for automated data acquisition and modeling.

·         Shielded Connection Cables: Low-capacitance cabling to ensure signal integrity up to 25 MHz.


 

Technical Capabilities

1. Comprehensive Parameter Measurement

The system simultaneously measures and analyzes parameters in both Series and Parallel modes:

·         Impedance (Z): Magnitude |Z|, Phase Angle theta, Series/Parallel Resistance (Rs, Rp), and Reactance (Xs, Xp).

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·         Admittance (Y): Magnitude |Y|, Conductance (Gs, Gp), and Susceptance (Bs, Bp).

·         Capacitance & Inductance: Cs, Cp, Ls, Lp.

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·         Loss Factors: Dissipation factor (D or tand) and Quality factor (Q)

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2. Wide Frequency Dynamics

·         Frequency Range:  1mHz to  25 MHz

·         EIS vs. Frequency: Real-time measurement of real and imaginary forms of impedance, conductance, and capacitance.

3. Advanced C-V & Semiconductor Analysis

·         Capacitance-Voltage (C-V): Characterize doping profiles and threshold voltages for diodes, photodiodes, and solar cells

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·         Interface State Density (Dit): Automated calculation of Dit-f at room temperature to evaluate the quality of semiconductor-insulator interfaces.

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·         Measurement Modes: Supports Amplitude, Constant Voltage, and Constant Current sweeps.


Advanced Plotting & Modeling

The integrated software generates industry-standard plots for immediate academic and industrial reporting:

·         Nyquist Plots: Essential for identifying equivalent circuit models and recombination mechanisms.

·         Bode Plots: Analyze frequency response and phase shifts.

·         Cole-Cole & Admittance Plots: Detailed dielectric and relaxation time analysis.

 

 

Primary Applications

·         Solar Cell Research: Identification of recombination mechanisms and carrier lifetime.

·         Photodetector Characterization: Analyzing the frequency response and junction capacitance of photodiodes.

·         Material Science: Studying AC conductivity and dielectric relaxation in thin films and nanostructures.

·         Electronic Devices: Quality control and Dit analysis for MOS structures and transistors.


Ordering Information & Warranty

·         Interface: High-speed USB for seamless PC integration.

·         Warranty: Includes a 2-year comprehensive warranty and technical support.

Would you like me to add a Technical Specifications Table comparing the IMP 8500 to other models, or should I generate a Cover Page for this catalog?

 

 

EIS vs Time (IMPT)

The impedance spectroscopy parameters (impedance, conductance, capacitance in real and imaginary form) are measured as function of time.

 

EIS vs Potential (IMPE)(Mott-Schottky)

Capacitance is measured as a function of voltage. The voltage is scanned from negative voltage to positive voltage. Capacitance voltage measurements are used to characterize fundamental properties of solar cells including an estimate of the charge carrier density and the drive level

capacitance pro le. A Mott- Schottky plot of a Silicon solar cell or Schottky diode is presented in Figure 1. The charge density distribution can be derived from these results using the following expression,

 

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