HALL EFFECT MEASUREMENT SYSTEM 9000

FYTRONIX Hall effect systems measure the electrical properties of semiconductor materials.

TECHNICAL SPECIFICATIONS

The device is compact and suitable for benchtop use.

Resistance (resistance) measuring range: 10-4 and 107 (Ohm.cm)

Carrier density: 107 -102l cm-3

Mobility measuring range: 107 (cm2/Volt.s).

Carrier concentration: 107-1021 cm-3

Current source range: 1 nA to 200 mA

Output voltage: 12V

Magnetic field: 0.5 Tesla

Hall voltage value: at least 1 mV

Sample measurement area: Measurement area up to 20x20 mm

Hall effect switcher

Measured parameters

Sheet resistance, resistivity,

Conductivity

Resistivity

Hall coefficient

Magneto resistance

These parameters are displayed on the computer screen via software.

Measurements made with software

Hall effect measurements

Current-voltage measurements (I-V)

Current-Resistance measurements (I-R)

Sample holder: For samples up to 20x2O mm

Reference sample

Direct attachment of the sample to the sample holder with pins 

Preparing contacts with silver paint