HALL EFFECT MEASUREMENT SYSTEM 9500

System housing is designed according to requested specifications

FYTRONIX Hall effect systems measure electrical properties of semiconductor materials

Our device is a compact system and can be used on the desktop.

Technical Specifications of the System:

Resistance range: 10-4-109 Ohm.cm

Mobility: 1-107 (cm2/Volt.s)

Carrier concentration: 107-1021 cm-3

Current source range: ±1 nA to ±20mA (DC)

Output voltage: ±12V

Minimum Hall voltage range: 10 μV

Magnetic field: 0.5 T

Computer-controlled via USB interface

Supports Van der Pauw and Hall rod-shaped samples

Resistance-current (I-R) measurements

Current-voltage (I-V) measurements are made, graphs are drawn, and the obtained data is recorded on the computer.

Measured parameters

sheet resistance

Resistance

Conductivity,

Magneto Resistance

Measurement method: Van der Pauw method

Magnetic field strength: 0.51T+0.03T

Magnetic flux density: 0.5T

Magnets: Permanent magnet feature

The system measure the following measurements depending on temperature:

Carrier concentration-temperature

Carrier mobility-temperature

Resistance-temperature

 Conductivity-temperature

Hall coefficient-temperature

The device measures all parameters with computer software.

Sample measurements up to 20x2Omm can be made with the sample holder.

Standard sample holder

Temperature controller

Temperature range: Room temperature – 350 K 

                                 80K-350 K (optional)

Low temperature cryostat (optional) 

Heating Rate 

Warranty period: 2 YEARS

THE VAN DER PAUW METHOD

The van der Pauw Method is a technique commonly used to measure the sheet resistance and the Hall Coefficient of a sample. Its power lies in its ability to accurately measure the properties of a sample of any arbitrary shape, so long as the sample is approximately two- dimensional (i.e. it is much thinner than it is wide) and the placement of the electrodes is known.

From the measurements made, the following properties of the material can be calculated:

♦ The sheet resistance, from which the resistivity can be inferred for a sample of a given thickness.

♦ The doping type (i.e. if it is a P-type or N-type) material.

♦ The sheet carrier density of the majority carrier (the number of majority carriers per unit area). From this, the density of the semiconductor, often known as the doping level, can be found for a sample with a given thickness.

♦ The mobility of the majority carrier.